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| inchange semiconductor isc product specification 1 isc website www.iscsemi.cn isc silicon npn power transistor BDY13-6 description collector-emitter breakdown voltage- : v (br)ceo = 60v(min.) collector-emitter saturation voltage- : v ce(sat )= 1v(max)@ i c = 3a high switching speed applications designed for lf signal powe amplifier applications. absolute maximum ratings(t a =25 ) thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 5 /w symbol parameter value unit v cbo collector-base voltage 80 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 5 v i c collector current-continuous 5 a i b base current 0.3 a p c collector power dissipation@t c =25 26 w t j junction temperature 175 t stg storage temperature -65~125
inchange semiconductor isc product specification 2 isc website www.iscsemi.cn isc silicon npn power transistors BDY13-6 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 50ma; i b = 0 80 v v (br)cbo collector-base breakdown voltage i c = 100ua; i e = 0 60 v v ce (sat) collector-emitter saturation voltage i c = 3a; i b = 0.3a 1 v v be (sat) base-emitter saturation voltage i c =3a; i b = 0.3a 1.3 v i ces collector cutoff current v ce = 60v; v be = 0 1.0 ua i ebo emitter cutoff current v eb = 4v; i c = 0 1.0 ua h fe1 dc current gain i c = 0.01a; v ce = 1v 55 h fe2 dc current gain i c = 1a; v ce = 1v 40 63 100 h fe3 dc current gain i c = 3a; v ce = 2v 40 f t current gain-bandwidth product i c = 0.2a; v ce = 10v; f=20mhz 30 mhz switching times t on turn-on time i c = 1a; i b = 50ma 0.3 s t off turn-off time i c = 1a; i b1 = 50ma; 1.5 s |
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